Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers
نویسندگان
چکیده
منابع مشابه
AB-stacked multilayer graphene synthesized via chemical vapor deposition: a characterization by hot carrier transport.
We report the synthesis of AB-stacked multilayer graphene via ambient pressure chemical vapor deposition on Cu foils and demonstrate a method to construct suspended multilayer graphene devices. In four-terminal geometry, such devices were characterized by hot carrier transport at temperatures down to 240 mK and in magnetic fields up to 14 T. The differential conductance (dI/dV) shows a characte...
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Water, when constrained between two graphene sheets and under ultrahigh pressure, can manifest dramatic differences from its bulk counterparts such as the van der Waals pressure induced water-to-ice transformation, known as the metastability limit of two-dimensional (2D) liquid. Here, we present result of a new crystalline structure of bilayer ice with the AB-stacking order, observed from molec...
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متن کاملAB-Stacked Multilayer Graphene Synthesized <italic>via</italic> Chemical Vapor Deposition: A Characterization by Hot Carrier Transport
T he synthesis of graphene on copper foils by chemical vapor deposition (CVD) has attracted considerable attention because of its potential in practical applications. 6 The quality of CVD graphene has yet to match that of the graphene mechanically exfoliated from pristine graphite, and therefore, the CVD growth techniques are still under very active research. Various thermodynamic conditions in...
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This article reviews the rich magneto-electronic properties of multilayer graphene systems. Multilayer graphenes are built from graphene sheets attracting one another by van der Waals forces; the magneto-electronic properties are diversified by the number of layers and the stacking configurations. For an N-layer system, Landau levels are divided into N groups, with each identified by a dominant...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2020
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.101.035419